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01 / CHIP LEVEL

芯片级低温低噪声放大器

InP cryogenic low-noise amplifier chips

HJZX-L-201C1–2 GHz3.3 K @ 4 K31 dB3.00 × 2.20 × 0.07 mm
HJZX-S-202C1.5–4.2 GHz3.7 K @ 4 K31 dB3.00 × 2.20 × 0.07 mm
HJZX-C-203C4–8 GHz4.1 K @ 4 K33 dB2.20 × 1.50 × 0.07 mm
HJZX-C-204CF4–8 GHz4.1 K @ 4 K33 dB / 50 dB 带外抑制2.20 × 1.50 × 0.07 mm
HJZX-K-301C8–26.5 GHz8.9 K @ 4 K27 dB2.20 × 1.20 × 0.07 mm
HJZX-KA-302C20–40 GHz16.1 K @ 4 K22 dB2.20 × 1.60 × 0.07 mm
02 / MODULE LEVEL

模组级低温低噪声放大器

Cryogenic low-noise amplifier modules

HJZX-L-201M 低温低噪声放大器模组
HJZX-L-201M1–2 GHz3.5 K31 dB26 mW
HJZX-S-202M 低温低噪声放大器模组
HJZX-S-202M1.5–4.2 GHz4.1 K31 dB23 mW
HJZX-C-203M 低温低噪声放大器模组
HJZX-C-203M4–8 GHz4.2 K33 dB20 mW
HJZX-C-204CM 低温低噪声放大器模组
HJZX-C-204CM4–8 GHz4.2 K33 dB20 mW
HJZX-K-301M 低温低噪声放大器模组
HJZX-K-301M8–26.5 GHz9.5 K27 dB16 mW
HJZX-KA-302M 低温低噪声放大器模组
HJZX-KA-302M20–40 GHz16.3 K21 dB12 mW